| PART |
Description |
Maker |
| PE6228 |
Medium Power 25 Watts RF Load Up To 3 GHz With
|
Pasternack Enterprises,...
|
| 2N6388G 2N638706 2N6387 2N6387G 2N6388 |
Plastic Medium?Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 ? 80 VOLTS
Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS
|
ONSEMI[ON Semiconductor]
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Medium Power Transistor (-50V, -1A)
|
ROHM
|
| SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving
From old datasheet system
Transceiver
Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving
Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| MJD42C ON2003 MJD74C MJD41C-1 MJD41CT4 MJD41C |
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS
From old datasheet system
DPAK For Surface Mount Applications
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
ON Semi
Motorola, Inc.
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| Y002625K5000A0L Y002725K5000A0L Y002625K5000A9L Y0 |
Bulk Metal㈢ Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/∑C and Power Rating up to 7 Watts
Bulk Metal垄莽 Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/隆?C and Power Rating up to 7 Watts
Bulk Metal庐 Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/掳C and Power Rating up to 7 Watts
Bulk Metal? Foil Technology Power Current Sensing Resistors with TCR of 5 ppm/°C and Power Rating up to 7 Watts
|
Vishay Siliconix
|
| 2SB1189 2SB1238 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Medium power transistor
|
Rohm
|
